The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for application in modern electronics are discussed.

• frontpages
• Table of Contents
• Foreword
• 1
  • 1.1 Technology development and history for obtaining silicon carbide and fabricating devices on its basis
  • 1.2 Polytypism in silicon carbide
  • 1.3 SiC parameters important for electronics
  • References
• 2
  • 2.1 Threshold energy of defect formation.
  • 2.2 Temperature dependence of the carrier removal rate
  • 2.3 Dependence of ηe on the measurement procedure
  • 2.4 Experimental data obtained in determining the value of ηe
  • 2.5 Compensation mechanism in SiC
  • 2.5.1 Model
  • 2.5.2 Comparison with experiment
  • 2.6 Radiation doping
  • 2.7 Effect of high irradiation doses
  • 2.8 Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons
  • 2.8.1 Introduction
  • 2.8.2 Generation of primary radiation defects under electron irradiation
  • 2.8.3 Formation of secondary radiation defects
  • 2.8.4 Comparison with experiment
  • Conclusion
  • References
• 3
  • 3.1 Introduction
  • 3.2 Intrinsic defects in silicon carbide
  • 3.2.1 Centers in the lower half of the energy gap
  • 3.2.2 Defects in the upper half of the energy gap
  • 3.3 Radiation doping of SiC
  • 3.3.1 Electrons
  • 3.3.2 Neutrons
  • 3.3.3 Alpha - particles
  • 3.3.4 Protons
  • 3.3.5 Ion implantation
  • 3.5 Radiation – stimulated photoluminescence in SiC
  • 3.5.1 “Defect” photoluminescence
  • 3.5.2 Restorian of SiC characteristics upon annealing
  • References
• 4
  • 4.1 Change in parameters of SiC devices under irradiation
  • 4.1.1 Schottky diodes
  • 4.1.2 PN diodes
  • 4.1.3 SiC field – effect transistors
  • 4.2 Possible transformation of the SiC polytype under irradiation
  • 4.2.1 Possible resons for the polytypism of SiC
  • 4.2.2 Selected experimental results
  • 4.3 Comparison of the radiation hardnesses of silicon and silicon carbide
  • 4.3.1 Dependence of the radiation hardness on the functional purpose of a device
  • 4.3.2 Effect of temperature on the radiation hardness
  • 4.4 Conclusion
  • 4.5 Acknowledgments
  • References
• keywords_editors
• About the Author