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Оглавление
- front-matter
- Dilute Magnetic Semiconducting (DMS) Materials
- Table of Contents
- Preface
- 1
- Introduction
- 1.1 Objectives
- 1.2 Introduction of semiconductors
- 1.2.1 Elemental semiconductors
- 1.2.2 Compound semiconductors
- 1.2.3 Intrinsic semiconductors
- 1.2.4 Extrinsic semiconductors
- 1.3 Diluted magnetic semiconductors
- 1.3.1 Applications of diluted magnetic semiconductors
- 1.3.1. (a) Spintronics
- 1.3.1. (b) Photonics
- 1.4 Diluted magnetic semiconductors - A review
- 1.5 Methods of preparation of bulk DMS materials
- 1.5.1 Mechanical alloying
- 1.5.2 High temperature melt technique
- 1.6 Characterization techniques
- 1.6.1 Structural properties of materials using X-ray diffraction technique
- 1.6.2 Morphological analysis
- 1.6.2.1 Scanning electron microscopy
- 1.6.3 Magnetic hysteresis measurements
- 1.6.3.1 Vibrating sample magnetometer
- References
- 2
- Analytical Techniques
- 2.1 Rietveld refinement technique
- 2.1.1 Structure factor
- 2.1.2 Procedure followed in Rietveld refinement process
- 2.2 Electronic charge density distribution
- 2.2.1 Fourier method
- 2.2.2 Maximum entropy method
- 2.3 Local structure analysis
- 2.3.1 Pair distribution function
- 2.4 A review of literature on charge density analysis
- References
- 3
- Sample Preparation and Structural Analysis
- 3.1 Sample preparation
- 3.1.1 Preparation of the samples using the melt technique
- 3.1.2 Preparation of Si1-xMnx using the ball milling technique
- 3.1.3 Preparation of Si1-xNix using the ball milling technique
- 3.2 Morphological studies
- 3.2.1 SEM analysis of Ge1-xVx
- 3.2.2 SEM analysis of Ge1-xCox
- 3.2.3 SEM analysis of Si1-xMnx
- 3.2.4 SEM analysis of Si1-xNix
- 3.3 Structural properties
- 3.3.1 Structural analysis of Ge1-xMnx (x = 0, 0.04, 0.06, 0.10)
- 3.3.2 Structural analysis of Ge1-xVx (x = 0.03, 0.06, 0.09)
- 3.3.3 Structural analysis of Ge1-xCox (x = 0.03, 0.06, 0.09)
- 3.3.4 Structural analysis of Si0.98Mn0.02
- 3.3.5 Structural analysis of Si1-xNix (x = 0, 0.03, 0.06, 0.09, 0.12)
- 3.4 Conclusion
- 3.4.1 Melt grown Ge1-xMnx
- 3.4.2 Melt grown Ge1-xVx
- 3.4.3 Melt grown Ge1-xCox
- 3.4.4 Ball milled Si1-xMnx
- 3.4.5 Ball milled Si1-xNix
- References
- 4
- Theoretical Electronic Charge Density Distribution
- 4.1 Introduction on theoretical electronic charge density distribution
- 4.2 Theoretical charge density estimation of DMS materialsSi1-xMxand Ge1-xMx(M = V, Mn, Co)
- 4.2.1 Theoretical charge density estimation of DMS materials Si1-xMx (M = V, Mn, Co)
- 4.2.2 Theoretical charge density estimation of DMS material Ge1-xMx (M = V, Mn, Co)
- 4.3 Conclusion
- References
- 5
- Experimental Charge Density Distribution in Prepared DMS Materials
- 5.1 Introduction
- 5.2 Charge density analysis of Ge1-xMnx (x = 0, 0.04, 0.06, 0.10)
- 5.3 Charge density analysis of Ge1-xVx (x = 0.03, 0.06, 0.09)
- 5.4 Charge density analysis of Ge1-xCox (x = 0.03, 0.06, 0.09)
- 5.5 Charge density analysis of ball milled Si and Si0.98Mn0.02
- 5.6 Charge density analysis of ball milled Si1-xNix
- 5.7 Conclusion
- 5.7.1 Melt grown Ge1-xMnx
- 5.7.2 Melt grown Ge1-xVx
- 5.7.3 Melt grown Ge1-xCox
- 5.7.4 Ball milled Si1-xMnx
- 5.7.5 Ball milled Si1-xNix
- References
- 6
- Magnetic Properties of Prepared DMS Materials
- 6.1 Introduction
- 6.2 Magnetic properties of Ge1-xMnx
- 6.2.1 Magnetism in Ge1-xMnx: Correlation to the structure
- 6.2.2 Magnetism in Ge1-xMnx: Correlation to the charge density
- 6.3 Magnetic properties of Ge1-xVx
- 6.3.1 Magnetism in Ge1-xVx: Correlation to the structure
- 6.3.2 Magnetism in Ge1-xVx: Correlation to the charge density
- 6.4 Magnetic properties of Ge1-xCox
- 6.4.1 Magnetism in Ge1-xCox: Correlation to the structure
- 6.4.2 Magnetism in Ge1-xCox: Correlation to the charge density
- 6.5 Magnetic properties of Si1-xMnx
- 6.5.1 Magnetism in Si1-xMnx: Correlation to the structure
- 6.5.2 Magnetism in Si1-xMnx: Correlation to the charge density
- 6.6 Magnetic properties of Si1-xNix
- 6.6.1 Magnetism in Si1-xNix: Correlation to the structure
- 6.6.2 Magnetism in Si1-xNix: Correlation to the charge density
- 6.7 Conclusion
- 6.7.1 Magnetism in Ge1-xMnx
- 6.7.2 Magnetism in Ge1-xVx
- 6.7.3 Magnetism in Ge1-xCox
- 6.7.4 Magnetism in Si0.98Mn0.02
- 6.7.5 Magnetism in Si1-xNix
- References
- 7
- Local Structure of Prepared DMS Materials
- 7.1 Introduction
- 7.2 Analysis of the local structure of Ge1-xMnx
- 7.3 Analysis of the local structure of Ge1-xVx
- 7.4 Analysis of the local structure of Ge1-xCox
- 7.5 Analysis of the local structure of Si1-xMnx
- 7.6 Analysis of the local structure of Si1-xNix
- 7.7 Conclusion
- 7.7.1 Melt grown Ge1-xMnx
- 7.7.2 Melt grown Ge1-xVx
- 7.7.3 Melt grown Ge1-xCox
- 7.7.4 Ball milled Si1-xMnx
- 7.7.5 Ball milled Si1-xNix
- References
- 8
- Conclusion
- 8.1 Melt grown Ge1-xMnx (x = 0, 0.04, 0.06, 0.10)
- 8.2 Melt grown Ge1-xVx (x = 0.03, 0.06, 0.09)
- 8.3 Melt grown Ge1-xCox (x = 0.03, 0.06, 0.09)
- 8.4 Ball milled Si1-xMnx (x = 0.02)
- 8.5 Ball milled Si1-xNix (x = 0, 0.03, 0.06, 0.09, 0.12)
- 8.6 Comparison of the theoretical and experimental charge densities of the Si and Ge based DMS materials
- References
- back-matter
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