"Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters, and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor silicon. Its properties and applications are determined by defects in its crystal structure. However, until now, there has been no complete and reliable description of the creation and transformation of such a defective structure. This book solves this mystery through two different approaches to semiconductor silicon: the classical and the probabilistic. This book brings together, for the first time, all existing experimental and theoretical information on the internal structure of semiconductor silicon. It will appeal to a wide range of readers, from materials scientists and practical engineers to students."--.

• Contents
• Preface
• Chapter One
  • 1.1. Features of dislocation-free silicon single crystals growth by floating zone melting and the Czochralski methods
  • 1.2. Defect structure arising in the process of dislocation free silicon single crystals growth
  • 1.3. Experiments with impurity kinetics of grown-in microdefects formation
  • 1.4. Research of grown-in microdefects transformation under various process effects
• Chapter Two
  • 2.1. Early physical models of the formation of grown-in microdefects
  • 2.2. Recombination-diffusion model for the formation of grown-in microdefects
  • 2.3. Model of the point defects dynamics
  • 2.4. Heterogeneous (two-stage) model of grown-in microdefect formation
  • 2.5. About various approaches to solving the problem of defect formation in silicon
• Chapter Three
  • 3.1. Recombination of intrinsic point defects in silicon and the classical theory of nucleatio
  • 3.2. About the accordance of process of the high temperature precipitation and the classical theory of nucleation
• Chapter Four
  • 4.1. Basic concepts of the microscopic theory of impurity kinetics in semiconductors
  • 4.2. Model of dissociative diffusion-migration of impurities
  • 4.3. Kinetics of the high-temperature precipitation process in dislocation-free silicon single crystals
  • 4.4. Complexation in semiconductor silicon within the framework of Vlasov's model for solids
  • 4.5. Kinetic model of growth and coalescence of precipitates of oxygen and carbon during the cooling of silicon crystal after growing
• Chapter Five
  • 5.1. Modeling of the processes of formation of microvoids and interstitial dislocation loops within the framework of point defects dynamic model
  • 5.2. The vacancy condensation model
  • 5.3. Kinetic model of formation and growth of interstitial dislocation loops
• Chapter Six
  • 6.1. Necessary conditions for the engineering of defects during the crystal growth
  • 6.2. Structure of the diffusion m
  • 6.3. Diffusion model of the formation of grown-in microdefects as applied to the description of defect formation in heat-treated silicon single crystals. Thermal donors and thermal acceptors
  • 6.4. The technique of virtual research of defect struct
  • 6.5. Use of information technologies for analysis and management of defect structure of initial single crystals and devices based on th
• Summary
• References
• Supplement